Propiedades estructurales y térmicas del compuesto semiconductor In0,8Mn0,2Sb
Keywords:
indium and manganese antimonide, direct fusion synthesis, X-ray powder diffraction, Differential Thermal Analysis (DTA)Abstract
A polycrystalline ingot of In0.8Mn0.2Sb was synthesized by direct fusion and subsequent controlled cooling of the stoichiometric mixture of the constituent elements in a pyrolysis-graphited and evacuated quartz ampoule. The analysis of the X-Ray powder diffraction pattern showed the presence of a cubic phase at room temperature and the existence of minority secondary phases. The program Fullprof was used to index the diffraction pattern and to calculate the lattice parameter, giving a = 6.439631 Å and cell volume V = 267.04 Å3. The phase transition temperatures were obtained from Differential Thermal Analysis (DTA) measurements performed on powder samples in evacuated quartz ampoules. The studied compound melts incongruently between 479 ºC and 519 ºC.
